Patent
1988-09-26
1990-10-23
Larkins, William D.
357 237, 357 43, H01L 2712, H01L 2973, H01L 2978
Patent
active
049658727
ABSTRACT:
A self-aligned, lateral bipolar transistor is disclosed having at least one insulated metal gate for control of the base. The device has a Semiconductor-On-Insulator structure that reduces parasitic capacitances. Proper gate control provides a high and controllable gain of the device and also turns off the parasitic transistors. The device achieves variable, high gains as well as high frequencies due to the use of the gate. It requires no masking or doping manufacturing steps in addition to those used in making standard CMOS circuits, and is CMOS compatible. In a preferred embodiment, a second insulated metal back gate is used to further enhance the operation of the device.
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Colinge, IEEE Trans. on Electron Devices, vol. ED34, No. 4, Apr., 1987, pp. 845-849.
Vasudev, P.K. (1986) "Silicon-On-Sapphire Hereropitaxy", Epitaxial Silicon Technology, Chapter 4, Academic Press, Inc.
IEEE Circuits and Devices Magazine, Jul. 1987, vol. 3, No. 4.
Scott et al., "CMOS Technology", VLSI Handbook, Chapter 10, Academic Press (1985).
Coble Paul M.
Denson-Low Wanda K.
Larkins William D.
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