Processing apparatus and method for plasma processing

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118719, 156345, 20429831, 20429833, 20429838, 20429802, 20429807, H01L 2100

Patent

active

051349655

ABSTRACT:
Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.
Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

REFERENCES:
patent: 4298419 (1981-11-01), Sunuki et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4778561 (1988-10-01), Ghanbari
patent: 4970435 (1990-11-01), Tanaka et al.
patent: 4985109 (1991-01-01), Otsubo et al.

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