Semiconductor laser and manufacturing method thereof

Details Semiconductor laser and manufacturing method thereof Semiconductor laser and manufacturing method thereof

1997-07-14

1999-10-26

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059740698

ABSTRACT:
In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.

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Abstract of Japanese Patent, Publ. No. 02-129915, dated May 7, 1992.

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