Ohmic contact for III-V semiconductor devices

Details Ohmic contact for III-V semiconductor devices Ohmic contact for III-V semiconductor devices

1991-05-14

1992-09-01

Hille, Rolf

357 67, H01L 2106, H01L 2112

Patent

active

051444100

ABSTRACT:
A dependable ohmic contact with consistently low specific contact resistance (<1.times.10.sup.-6 .OMEGA.-cm.sup.2) to n-type GaAs (10) is produced by a three or four step procedure. The procedure, which is employed following implantation to form doped regions in the GaAs substrate for contacting thereto, comprises:

REFERENCES:
patent: 3914785 (1975-10-01), Ketchow
patent: 4001056 (1977-01-01), Groves et al.
patent: 4188710 (1980-02-01), Davey et al.
patent: 4632713 (1986-12-01), Tiku
"Electrical and Structural Properties of W-In Based Ohmic Contacts to GaAs"--Dutta et al., Solid State Electronics, vol. 33, No. 12, pp. 1601-1604.
"Laser Annealed Ta/Ge and Ni/Ge Ohmic Contacts to GaAs"--Anderson et al.--IEEE Electron Device Letters, vol. EDL-2, No. 5, May 1981, pp. 115-117.

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