Semiconductor switching device and method of controlling a carri

Details Semiconductor switching device and method of controlling a carri Semiconductor switching device and method of controlling a carri

1988-08-10

1992-09-01

James, Andrew J.

357 29, 357 91, H01L 2974, H01L 2714

Patent

active

051444020

ABSTRACT:
A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semiconductor switching device can be improved without causing any unacceptable disadvantages for other characteristics.

REFERENCES:
patent: 4281336 (1981-07-01), Sommer et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4370180 (1983-01-01), Azuma et al.
patent: 4511913 (1985-04-01), Nagano
patent: 4710792 (1987-12-01), Suzuki
Solid-State Electronics vol. 30, No. 2, pp. 185-188, 1987 "Temperature Behavior and Annealing of Insulated Gate Transistors Subjected to Localized Lifetime Control by Proton Implantation".
The Report of Hosei University Ion Beam Engineering Laboratory, Separate vol. 6, 1987, pp. 93-98, Japan, "Production of Static Induction Thyristors by Proton Irradiation".

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