Silicon-on insulator transistor with internal body node to sourc

Details Silicon-on insulator transistor with internal body node to sourc Silicon-on insulator transistor with internal body node to sourc

1991-02-28

1992-09-01

Jackson, Jr., Jerome

357 234, 357 233, H01L 2701

Patent

active

051443902

ABSTRACT:
A transistor and a method of making a transistor are disclosed, where a tunnel diode is formed to make connection between the source of the transistor and the body node underlying the gate. For the example of an n-channel transistor, a p+ region is formed by implant and diffusion under the n+ source region, the p+ region in contact on one end with the relatively lightly doped p-type body node. The relatively high dopant concentration of both the p+ region and the n+ source region creates a tunnel diode. The tunnel diode conducts with very low forward voltages, which causes the body node region to be substantially biased to the potential of the source region. Methods for forming the transistor are also disclosed, including the use of a source/drain anneal prior to p-type implant, or alternatively a second sidewall oxide filament, to preclude the boron from counterdoping the LDD extension at the source side. Both silicon-on-insulator and bulk embodiments are disclosed.

REFERENCES:
patent: 4053916 (1977-11-01), Cricchi et al.
patent: 4797721 (1989-01-01), Hsu
patent: 4969023 (1990-11-01), Svedberg
Fogiel, Modern Microelectronics (Research and Education Association, N.Y., 1972), pp. 292, 534-536.
Tihanyi et al., "Properties of ESFI MOS Transistors Due to the Floating Substrate and the Finite Volume", IEEE Transactions on Electron Devices, vol. ED-22, No. 11, Nov. 1975, 1017-1023.
Tihanyi et al., "Influence of the Floating Substrate Potential on the Characteristics of ESFI MOS Transistors", Solid State Electronics, (Pergamon) 1975, vol. 18, pp. 309-314.
Lee et al., "Island-Edge Effects in C-MOS/SOS Transistors", IEEE Transactions on Electron Devices, vol. ED-25, No. 8, Aug., 1978, pp. 971-978.
Kumamoto et al., "An SOI Structures for Flash A/D Converter" IEEE Journal of the Solid-State Circuits, vol. 23, No. 1, Feb. 1988; pp. 198-201.

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