Semiconductor light detector utilizing an avalanche effect and h

Details Semiconductor light detector utilizing an avalanche effect and h Semiconductor light detector utilizing an avalanche effect and h

1990-10-23

1992-09-01

Jackson, Jr., Jerome

357 16, 357 13, H01L 29205, H01L 3106

Patent

active

051443813

ABSTRACT:
A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating layer, an annular second semiconductor layer formed on the first semiconductor layer, a light detecting region formed by doping an impurity of a second conductivity type in a surface region of the first semiconductor layer, in such a manner that a peripheral portion of the light detecting region is located outside an inner periphery of the second semiconductor layer, the light detecting region defining a first p-n junction in combination with the first semiconductor layer, and a guard ring formed by doping an impurity of the second conductivity type in a surface region of the second semiconductor layer to surround the peripheral portion of the light receiving region with the first semiconductor layer, the second p-n junction having a concentration gradient lower than that of the first p-n junction. By virtue of the presence of the second semiconductor layer, the junction depth of the peripheral portion of the light detecting region is less than that of the central portion of the light detecting region, and the junction depth of the guard ring is greater than that of the peripheral portion of the light detecting region. As a result, a sufficient guard ring effect can be obtained without a guard ring having a great junction depth.

REFERENCES:
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patent: 4877951 (1989-10-01), Muro
patent: 4935795 (1990-06-01), Mikawa et al.
patent: 4974061 (1990-11-01), Torikai

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