Method of making integrated PNP and NPN bipolar transistors and

Details Method of making integrated PNP and NPN bipolar transistors and Method of making integrated PNP and NPN bipolar transistors and

1983-05-02

1985-11-19

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29591, 29571, 148187, H01L 21225

Patent

active

045533180

ABSTRACT:
A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.

REFERENCES:
patent: 3374125 (1968-03-01), Goldsmith
patent: 3852802 (1974-12-01), Wolf et al.
patent: 3954522 (1976-05-01), Roberson
patent: 4050031 (1977-09-01), Gray et al.
patent: 4103188 (1978-07-01), Morton
patent: 4260431 (1981-04-01), Piotrowski
patent: 4299024 (1981-11-01), Piotrowski
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4325180 (1982-04-01), Curran
patent: 4462149 (1984-07-01), Schwabe
patent: 4481707 (1984-11-01), Cunniff

Affiliated with

Also associated with

Rating

Method of making integrated PNP and NPN bipolar transistors and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making integrated PNP and NPN bipolar transistors and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making integrated PNP and NPN bipolar transistors and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-77125