Bipolar transistor and method of producing the same

Details Bipolar transistor and method of producing the same Bipolar transistor and method of producing the same

1989-10-11

1990-10-23

Wojciechowicz, Edward J.

357 56, 357 49, H01L 2972

Patent

active

049656503

ABSTRACT:
A dummy emitter (a dummy collector, in an inverted type) is formed in the portion corresponding to an emitter (a collector, in the inverted type) region, on a multiplayer structural material including layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of the emitter (the collector, in the inverted type) region is formed, while the dummy emitter (the dummy collector, in the inverted type) is inverted into an emitter (a collector, in the inverted type) electrode, thereby forming an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter (the collector, in the inverted type). Using the thus formed emitter (the collector, in the inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacent to the emitter (the collector, in the inverted type). In another method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, a portion of the layer forming the base, and if necessary a portion of the layer forming the emitter and a portion of the layer forming the collector. Further, an extension layers and the layer forming the collector, and an extension type dummy emitter (a dummy collector, in the inverted type) is formed which extends from the emitter (the collector, in the inverted type) on the base portion to the insulating region formed by transforming from the semiconductor material forming the base, and using it as mask, the external base region is exposed to form an emitter-including layer and the dummy emitter (the dummy collector, in the inverted type) is replaced by an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter-including layer.

REFERENCES:
patent: 4679305 (1987-07-01), Morizuka
patent: 4706378 (1987-11-01), Havemann
"(Invited) Heterojunction Bipolar Transistors", Harris, Jr. et al.; Proceedings of the 14th Conference (1982 International) on Solid State Devices, Tokyo, 1982; Japanese Journal of Applied Physics, vol. 22 (1982) Supplement 22-1, pp. 375-380.
"GaAs/GaAlAs Heterojunction Bipolar Transistors with Cutoff Frequencies Above 10 GHz", Asbeck et al.; 8179 IEEE Electron Device Letters, vol. EDL-3 (1982) Dec., No. 12, New York, U.S.A., pp. 366-368.
"A New Self-Aligned Structure AlGaAs/GaAs HBT FOR High Speed Digital Circuits", Nagata et al.; Inst. Phys. Conf. Ser. No. 79; Chapter 11, Presented at Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1985, pp. 589-594.
"AlGaAs/GaAs HBT With GalnAs Cap Layer Fabricated by Multiple-Self-Alignment Process Using One Mask," Ota et al.; Reprinted from Electronics Letters, Apr. 27, 1989, vol. 25 No. 9, pp. 610-612.
"AlGaAs/GaAs Heterojunction Bipolar Transistors with Small Size Fabricated by a Multiple Self-Alignment Process Using One Mask", Inada et al.; Reprinted from IEEE Transactions on Electron Devices, vol. ED-34, No. 12, Dec. 1987, pp. 2405-2411.
"Properties of Molecular-Beam-Epitaxy-Grown and 0.sup.+ -Implanted GaAs and Their Application to the Formation of a Buried Collector of an AlGaAs/GaAs Heterojunction Bipolar Transistor", Ota et al.; Reprinted from Journal of Applied Physics, vol. 64, Jul. 15, 1988, No. 2, pp. 926-930.

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