Vertical MOS field effect transistor having a high withstand vol

Details Vertical MOS field effect transistor having a high withstand vol Vertical MOS field effect transistor having a high withstand vol

1989-05-17

1990-10-23

Larkins, William D.

357 13, 357 238, H01L 2978

Patent

active

049656473

ABSTRACT:
A V-MOS FET has a semiconductor body of one conductivity type, a plurality of base regions of the other conductivity type formed in a surface portion of the semiconductor body in a form of matrix having rows and columns, a plurality of source regions of the one conductivity type formed in the base regions, a plurality of auxiliary regions of the other conductivity type formed in the surface portion of said semiconductor body at crossing points of the rows and columns of the base region matrix, a mesh-shape gate electrode formed on region between the source regions to cover the auxiliary regions, a source electrode contacting at least the source regions and a drain electrode contacting a back surface of the semiconductor body.

REFERENCES:
patent: 4642674 (1987-02-01), Schoofs
patent: 4750028 (1988-06-01), Ludikhuize
patent: 4777521 (1988-10-01), Coe

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