Thin film transistor and crossover structure for liquid crystal

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Details

357 4, 357 71, 357 41, H01L 2978, H01L 2712

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active

049656465

ABSTRACT:
A three-mask process for fabricating liquid crystal devices enables the simultaneous fabrication of thin film transistors and conductor crossovers, thereby permitting the simultaneous fabrication of drive circuitry on the periphery of the devices.

REFERENCES:
patent: 4599246 (1986-07-01), Harajiri et al.
patent: 4697331 (1987-08-01), Boulitrop et al.
patent: 4738749 (1988-04-01), Maurice et al.

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