Saturable charge FET

Details Saturable charge FET Saturable charge FET

1987-03-20

1990-10-23

Hille, Rolf

357 16, 357 58, H01L 2980

Patent

active

049656457

ABSTRACT:
A new gallium arsenide gate heterojunction FET is disclosed. The gate is a multi-layer structure including an intermediate carrier depletable layer. Upon applying a gate voltage, the intermediate layer becomes depleted thereby effectively increasing the gate resistance and reducing gate leakage current.

REFERENCES:
patent: 4442445 (1984-04-01), Malik et al.
patent: 4583105 (1986-04-01), Rosenberg
patent: 4590502 (1986-05-01), Morkol
patent: 4593301 (1986-06-01), Inata et al.
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4663643 (1987-05-01), Mimura
patent: 4672406 (1987-06-01), Sawada et al.
patent: 4673959 (1987-06-01), Shiraki et al.
T. Zipperian et al., "A GaAs/InGaAs/GaAs . . . FET," Inst. Phys. Conf. Ser. No. 79, Ch. 8, Int. Symp. GaAs and Related Compounds, Karuizawa, Japan 1985, pp. 421-425.
P. M. Solomon, et al., "A GaAs Gate Heterojunction FET", IEEE Electron Device Letters, vol. EDL-5, No. 9, Sep. 1984.
H. Kinoshita, et al., "A New Insulated Gate Inverted Structure Modulation Doped AlGaAs/GaAs/N-AlGaAs FET", Jap. J. App. Phys., vol. 23, p. L836, 1924.
M. Ogura, et al., "Self Aligned Enhancement Mode FET with AlGaAs as Gate Insulator", Journal of Vacuum Science & Technology B, vol. 3, p. 581, 1985.

Affiliated with

Also associated with

Rating

Saturable charge FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Saturable charge FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Saturable charge FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-770585