Method of forming closely spaced electrodes onto semiconductor d

Details Method of forming closely spaced electrodes onto semiconductor d Method of forming closely spaced electrodes onto semiconductor d

1974-06-26

1976-08-24

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29591, B01J 1700

Patent

active

039758184

ABSTRACT:
A method of forming at least two electrodes of a portion of a semiconductor device, the portion including one or more semiconductor regions and being covered with an insulating protective film, comprises the steps of providing a hole for the first electrode in the insulating protective film, forming the first electrode through the hole, rendering the surface of the first electrode insulative, providing a hole for the second electrode in the insulating protective film by employing the insulative surface of the first electrode as at least a part of a mask, and forming the second electrode through the second-mentioned hole, whereby the electrodes are situated in close proximity with the insulative surface of the first electrode interposed therebetween.

REFERENCES:
patent: 3745647 (1973-07-01), Boleky
patent: 3783500 (1974-01-01), Tokuyama

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