Photosensitive zero voltage semiconductor switching device

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307252R, 357 30, 250211J, H03K 342, H01L 2714, H01L 2975

Patent

active

041662245

ABSTRACT:
A multilayer semiconductor switching device having alternating layers of opposite conductivity type is provided which is sensitive to impinging photon flux. The switching device has first, second and third electrodes and has a predetermined holding voltage. The switching device is constructed to receive photon flux from an external source and has variable output characteristics dependent upon the impinging photon flux. At least one photovoltaic device is disposed adjacent the semiconductor switching device for also receiving impinging photon flux and is connected across the first and second electrodes of the switching device. The photovoltaic device is operable in response to the impinging photon flux for generating a voltage greater than the holding voltage of the switching device and for applying the voltage across the first and second electrodes. The switching device generates base drive in response to the impinging photon flux. The first and third electrodes of the switching device are operable to receive an external voltage, such that a substantial change in impedence results across the first and third electrodes when the external voltage is less than the voltage generated by the photovoltaic device.

REFERENCES:
patent: 3535532 (1970-10-01), Merryman
patent: 3970843 (1976-07-01), Dumas
patent: 4027322 (1977-05-01), Heinecke
"Light-activated Switch Expands Uses of Silicon Controlled Rectifiers", by E. Keith Howell, Electronics Mag., vol. 37, No. 5, 5/4/64, pp. 53-59.

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