Semiconductor device with a means for discharging carriers

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307280, 307456, 357 22, 357 48, 357 51, 357 15, H01L 2704, H03K 19013, H03K 19088

Patent

active

046138870

ABSTRACT:
In an output transistor of transistor-transistor logic (TTL) circuits, an output transistor of TTL is provided with, in a region between a p-type base region and the p-type semiconductor substrate on which a TTL circuit is fabricated, a p.sup.- diffusion which causes carriers stored in the base region when the output transistor is switched from ON state to OFF state to be discharged quickly. When the output transistor is OFF, the p.sup.- diffusion is pinched off and no current flows. Thus, when the output transistor is switched from OFF state to ON state, the output voltage changes sharply. Because of this, the switching speed of the TTL is improved. In another embodiment, a p.sup.- region is formed between a p-type base region and p.sup.+ isolation diffusion, and an n.sup.+ diffusion is formed to cover at least one part of the p.sup.- diffusion and is connected to an n-type collector region. In another embodiment, a p-type base region extends to the p.sup.+ isolation diffusion, and an n.sup.+ diffusion is formed in a region between the base region and the isolation diffusion and is connected to an n-type collector region.

REFERENCES:
patent: 3676713 (1972-07-01), Wiedmann
patent: 3693032 (1972-09-01), Winnard
patent: 4095252 (1978-06-01), Ochi
patent: 4118640 (1978-10-01), Ochi et al.
patent: 4198649 (1980-04-01), Berry
patent: 4266233 (1981-05-01), Bertotti et al.
patent: 4323913 (1982-04-01), Murrmann et al.

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