Substrate injection clamp

Details Substrate injection clamp Substrate injection clamp

1989-07-19

1990-10-23

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072964, H03K 301, H03K 508

Patent

active

049654667

ABSTRACT:
A substrate injection clamp uses a pre-existing NPN open-collector transistor to provide substrate protection for the parasitic diode formed between the collector of the transistor and the P-substrate of the IC. The NPN transistor is responsive to a control signal for rendering the transistor conductive and non-conductive. If a negative potential is applied to the collector, the NPN transistor operates in an inverse active mode, provided that the control signal is asserted, to source current from the emitter through the collector thereby clamping the voltage at the latter to a predetermined value less than the forward bias potential of the parasitic diode. If the control signal is not asserted, a circuit detects its absence and a provides a bias signal to the base to allow the NPN transistor to operate in the inverse active mode.

REFERENCES:
patent: 4577211 (1986-03-01), Bynum et al.
patent: 4670668 (1987-06-01), Liu
patent: 4794278 (1988-12-01), Vajdic
patent: 4862415 (1989-08-01), Nakano

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