Semiconductor substrate having silicon oxide layers formed betwe

Details Semiconductor substrate having silicon oxide layers formed betwe Semiconductor substrate having silicon oxide layers formed betwe

1997-02-12

1999-10-26

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

257756, 257913, 257611, H01L 2936

Patent

active

059733861

ABSTRACT:
On the back side of a base body, three layers of polysilicon layer are formed. These polysilicon layers contain boron. A boron concentration C.sub.B(1), C.sub.B(2) and C.sub.B(3) of the first, second and third polysilicon layers from the base body side have a relationship of C.sub.B(1) .ltoreq.C.sub.B(2) .ltoreq.C.sub.B(3). On the other hand, between the polysilicon layers, silicon oxide layers are formed respectively. Upon fabrication of a semiconductor device, at first, a gettering heat treatment is effected for the substrate under a given condition. Thus, contaminating impurity is captured at the grain boundary of polysilicon layers formed on the back side of the base body. Next, the polysilicon formed at the most back side is removed by etching. By this, contaminated impurity is removed from the semiconductor substrate.

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