Method of cleaning vacuum processing apparatus

Details Method of cleaning vacuum processing apparatus Method of cleaning vacuum processing apparatus

1996-05-16

1998-10-06

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 438905, 134 11, H01L 21302

Patent

active

058175784

ABSTRACT:
According to a cleaning method of a vacuum processing apparatus, an aluminum film formed on a semiconductor substrate and covered by a resist pattern is etched by a gas containing chlorine radicals in a processing chamber of the vacuum processing apparatus and, after that, a plasma of diluted gases of mixture gases consisting of a gas containing oxygen radicals, a gas containing fluorine radicals, and a gas containing chlorine radicals is generated in the processing chamber, thereby removing residual reaction products.

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