Process for fabricating an INP semiconductor thin film on silico

Details Process for fabricating an INP semiconductor thin film on silico Process for fabricating an INP semiconductor thin film on silico

1989-02-09

1990-10-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 156613, 437 81, 437111, 437112, 437939, 437976, H01L 2120

Patent

active

049652249

ABSTRACT:
An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAS has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.

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Lee et al., "InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Vapor Phase Epitoxy", Appl. Phys. Lett., 52(11), Mar. 11, 1988, pp. 880-882.
Sugo et al., "Buffer Layer Effects an Residual Stress in Infan Si Substrates", Appl. Phys. Lett. 54(18), May 1989, pp. 1754-1756.
Horikawa et al., "Hetro-Epitaxial Growth of Inf on Si Substrates by LP-Movpe", J. Crys. Growth, vol. 93, Nov. 1988, pp. 523-536.
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