Manufacturing process for a monolithic semiconductor device comp

Details Manufacturing process for a monolithic semiconductor device comp Manufacturing process for a monolithic semiconductor device comp

1988-12-21

1990-10-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437 59, 437 74, 437151, 437228, H01L 21331

Patent

active

049652150

ABSTRACT:
The device uses the horizontal insulating region and the buried layer as the power transistor base and emitter respectively. An epitaxial growth is interposed between the two diffusions needed to form the aforesaid regions and those needed to create the base and the emitter of the transistor of the integrated control circuit.

REFERENCES:
patent: 3481801 (1969-12-01), Hugle
patent: 3956035 (1976-05-01), Herrmann
patent: 4032372 (1977-06-01), Vora
patent: 4054899 (1977-10-01), Stehlin et al.
patent: 4404048 (1983-09-01), Vogelsang
patent: 4483738 (1984-11-01), Blossfeld
patent: 4721684 (1988-01-01), Musumeci
patent: 4780430 (1988-10-01), Musumeci et al.
patent: 4826780 (1989-05-01), Talcemoto et al.

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