Metal treatment – Compositions – Heat treating
Patent
1984-08-27
1986-09-23
Hearn, Brian E.
Metal treatment
Compositions
Heat treating
148189, H01L 21225
Patent
active
046133810
ABSTRACT:
In a method for fabricating a thyristor in which n-type impurities are diffused in a p-base of a pnp wafer to form an n.sup.+ -emitter, the step of diffusing the n-type impurities for forming the n.sup.+ -emitter has the conditions which are set not to exceed the range where the amount of doped impurities is smaller than that which is electrically activated, thereby performing the gettering process by diffusing n-type impurities in two surfaces of the pnpn wafer in which the n.sup.+ -emitter having no defects is formed. Even if a thyristor obtained by the above processes has a high off-state voltage, it has a low on-state voltage, a short turn-off time and a small variation in a reverse recovery charge.
REFERENCES:
patent: 3821038 (1974-06-01), Shwuttke
patent: 4370180 (1983-01-01), Azuma et al.
Schwettmann et al., "Carrier Profile Change for Phosphorus-Diffused Layers on Low Temperature Heat Treatment", Applied Phys. Lett. 19, 7, (1971).
Ghondi, Semiconductor Power Devices, p. 278, Wiley & Sons, (1977).
Biederman et al., "Pre-Precipitation of Phosphorus in Heavily Doped Silicon", Applied Phys. Lett. 17, 10, (1970).
Karmonov et al., "Absence of Donor Properties of Phosphorus Diffusing in Ion Bombarded Silicon", Sov. Phys. Semicond., vol. 9, No. 9.
Ghondi, VLSI Fabrication Principles, John Wiley & Sons, 1983.
Callahan John T.
Hearn Brian E.
Kabushiki Kaisha Toshiba
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