Photolithography alignment mark manufacturing process in tungste

Details Photolithography alignment mark manufacturing process in tungste Photolithography alignment mark manufacturing process in tungste

1997-06-09

1999-10-26

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438697, 438724, 216 38, 257752, 257797, H01L 2100

Patent

active

059727934

ABSTRACT:
A method is disclosed for forming alignment marks at the outer perimeter of wafers where they are not susceptible to much damage during chemical-mechanical polishing (CMP) process. Complete protection is provided by recessing the alignment mark into the substrate by etching. Recess etching is accomplished at the same time the isolation trenches are formed to delineate device areas. Thus, alignment marks are provided with a protective recess without extra steps. Furthermore, by forming alignment marks at the outer perimeter of the wafer, productivity is improved by providing maximum usage of wafer area for integrated circuits.

REFERENCES:
patent: 5264310 (1993-11-01), Kawai
patent: 5503962 (1996-04-01), Caldwell
patent: 5578519 (1996-11-01), Cho
patent: 5750433 (1998-05-01), Jo
patent: 5783490 (1998-07-01), Tseng
patent: 5786275 (1998-07-01), Kubo

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