Metallized aluminum nitride substrate

Details Metallized aluminum nitride substrate Metallized aluminum nitride substrate

1992-03-23

1997-06-10

Turner, Archene

Stock material or miscellaneous articles

Composite

Of metal

428472, 428697, 428698, 428699, 428901, C04B 4151

Patent

active

056374062

ABSTRACT:
An aluminum nitride substrate where an electroconductive metallized layer is formed on a ceramic substrate comprising a sintered substance of aluminum nitride with a high thermal conductivity for example 200 W/m.multidot.K. The sintered substance of aluminum nitride contains a proper amount of a sintering assistance agent component. The density on the surface of an intergranular phase component mainly comprising the sintering assistance agent component is 3 weight % or less. The metallized layer formed on the sintered substance of aluminum nitride defining the density of the intergranular phase component on the surface of the sintered substance has an excellent bonding strength against the sintered substance of aluminum nitride, the bonding strength being nearly stable.

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Iwase et al., "Thick Film and Direct Bond Copper Forming Technologies for Aluminum Nitride Substrate," IEEE Trans. on Components, Hybrids and Manufacturing Tech., vol. CHMT-8, No. 2, Jun. 1985.
American Ceramic Society Bulletin, vol. 60 (1981) May, No. 5, Columbus, Ohio, pp. 540-545; "Interfacial Bond Strength in Alumina Ceramics Metallized and Cofired with Tungsten", Otsuka et al.
Proceedings of the 5th Int. Microelectronics Conf. Int. Soc. Hybrid Microelectron, Tokyo, Japan, May 25-27, 1988, pp. 147-152; "Preparation of High Thermal Conductivity A1N Ceramics and Metallization", Yoneda et al.

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