Post-CMP wet-HF cleaning station

Details Post-CMP wet-HF cleaning station Post-CMP wet-HF cleaning station

1998-02-09

1999-09-21

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134902, 134 32, 438691, 438753, C23G 102

Patent

active

059548886

ABSTRACT:
The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ("HF") solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.

REFERENCES:
patent: 4002488 (1977-01-01), Campanelli
patent: 4417945 (1983-11-01), Komatsuzaki
patent: 4944119 (1990-07-01), Gill, Jr. et al.
patent: 5095661 (1992-03-01), Gill, Jr. et al.
patent: 5306671 (1994-04-01), Ogawa et al.
patent: 5317778 (1994-06-01), Kudo et al.
patent: 5340437 (1994-08-01), Erk et al.
patent: 5475889 (1995-12-01), Thrasher et al.
patent: 5486234 (1996-01-01), Contolini et al.
patent: 5551986 (1996-09-01), Jain
patent: 5568821 (1996-10-01), Ohmori et al.
patent: 5581837 (1996-12-01), Uchiyama et al.
patent: 5609719 (1997-03-01), Hempel
patent: 5626159 (1997-05-01), Erk et al.
patent: 5626681 (1997-05-01), Nakano et al.
patent: 5639311 (1997-06-01), Holley et al.
patent: 5643044 (1997-07-01), Lund
patent: 5651160 (1997-07-01), Yonemizu et al.
patent: 5791969 (1998-08-01), Lund
patent: 5836325 (1998-11-01), Akanuma et al.

Affiliated with

Also associated with

Rating

Post-CMP wet-HF cleaning station does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post-CMP wet-HF cleaning station, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post-CMP wet-HF cleaning station will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-76312