Fabrication of photovoltaic devices by solid phase epitaxy

Details Fabrication of photovoltaic devices by solid phase epitaxy Fabrication of photovoltaic devices by solid phase epitaxy

1977-11-21

1979-08-28

Larkins, William D.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 29590, 148176, 357 30, 357 67, 357 68, H01L 2120, H01L 2124

Patent

active

041655583

ABSTRACT:
Fabrication of photovoltaic devices by solid phase epitaxy; devices produced by this method consisting of a semiconductor base and a semiconductor junction-forming epitaxial layer. The epitaxial layer grown by solid phase means from a metal-semiconductor alloy or from a sandwich structure of semiconductor/metal on the semiconductor base.

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patent: 4003770 (1977-01-01), Janowiecki et al.
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patent: 4070206 (1978-01-01), Kressel et al.
Canali et al., "Solid-Phase Epitaxial Growth of Si . . . ," J. Applied Physics, vol. 46, No. 7, Jul. 1975, pp. 2831-2836.
Pretorius et al., "Dissociation Mechanism for Solid-Phase Epitaxy of Silicon . . . ," Applied Physics Letters, vol. 29, No. 9, Nov. 1, 1976, pp. 598-600.

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