Field emission device with integrally formed electrostatic lens

Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...

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313336, 313422, H01J 162, H01J 2116

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active

054303478

ABSTRACT:
A FED including an integrally formed electrostatic lens with an aperture having a diameter which is dis-similar from an aperture of the FED gate to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

REFERENCES:
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 4983878 (1991-01-01), Lee et al.
patent: 5012153 (1991-04-01), Atkinson et al.
"Field-Emitter Arrays for Vacuum Microelectronics" by Spindt et al, IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991, pp. 2355-2363.

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