Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-09-15
1997-06-10
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
134 12, 438905, 438758, 438788, 438792, 216 67, H01L 21311
Patent
active
056371900
ABSTRACT:
A method for limiting contaminant particle deposition upon integrated circuit layers within plasma assisted process reactor chambers. First, a plasma assisted process is undertaken upon an integrated circuit layer within a plasma assisted process reactor chamber. The plasma assisted process employs a first reactant gas composition, a first radio frequency power and a first reactor chamber pressure appropriate to the plasma assisted process and the integrated circuit layer. Immediately following the plasma assisted process is undertaken a first plasma purge step. The first plasma purge step employs a first concentration of an oxidizing reactant gas, a first concentration of a non-oxidizing reactant gas, a second radio frequency power and a second reactor chamber pressure. The second radio frequency power is lower than the first radio frequency power and the second reactor chamber pressure is higher than the first reactor chamber pressure. Finally, there is undertaken immediately following the first plasma purge step a second plasma purge step. The second plasma purge step employs a second concentration of the oxidizing reactant gas, a second concentration of the non-oxidizing reactant gas, a third radio frequency power and a third reactor chamber pressure. The third radio frequency power is less than the second radio frequency power, and the third reactor chamber pressure is lower than the second reactor chamber pressure.
REFERENCES:
patent: 4351696 (1982-09-01), Radegan
patent: 4750980 (1988-06-01), Hynecek
patent: 4923828 (1990-05-01), Gluck
patent: 4992137 (1991-02-01), Cathey et al.
patent: 5059278 (1991-10-01), Cohen et al.
patent: 5271799 (1993-12-01), Langley
patent: 5328555 (1994-07-01), Gupta
patent: 5387777 (1995-02-01), Bennett et al.
patent: 5403780 (1995-04-01), Jain et al.
patent: 5423918 (1995-06-01), Gupta et al.
"Dual-Function Remote Plasma Etching/Cleaning System Applied To Selective Etching of SiO.sub.2, and Removal of Polymeric Residues"; J. Vac. Sci. Tech. A., Vac. Surf. Films; vol. 11, No. 5; pp. 2,496-2,507; Sep.-Oct. 1993; Yasuda et al.
Breneman R. Bruce
Goudreau George
Saile George O.
Szecsy Alek P.
Vanguard International Semiconductor Corporation
LandOfFree
Plasma purge method for plasma process particle control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma purge method for plasma process particle control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma purge method for plasma process particle control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-762296