Electrode forming process

Fishing – trapping – and vermin destroying

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437189, 437201, 437202, H01L 2940

Patent

active

054299861

ABSTRACT:
The present invention relates to an electrode forming process for forming an ohmic contact on a compound semiconductor crystal of a GaAs-based material having p-type conductivity. The process includes a first step of depositing a thin Pt layer having a thickness larger than 50 .ANG. on the compound semiconductor crystal, and a second step of depositing a Ti/Pt/Au electrode on the Pt layer.

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patent: 4811079 (1989-03-01), Mallard
patent: 5024958 (1991-06-01), Awano
patent: 5036023 (1991-07-01), Dautremont-Smith et al.
K. Tsutsui et al., "Ion Beam Mixing of Pt/GaAs and Formation of Ohmic Contacts," Journal of Applied Physics, vol. 56, No. 2, Jul. 15, 1984, p. 560.
G. E. Bulman et al., "Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs/Al.sub.x Ga.sub.1-x As Heterostructures . . . ", J. Electrochem. Soc., vol. 136, No. 8, Aug. 1989, pp. 2423-2426.
"Pt/Ti/Pt/Au Ohmic Contact For p-type GaAs" by H. Okada, S. Shikata and H. Hayashi, Mar. 1990.
Uenoyama et al, 1988 Autumn Conference of Applied Physics, (1988).
V. Kumar, J. Phys. Chem Solids, vol. 36, p. 535.
Okada et al., "Electrical Characteristics & Reliability of Pt/Ti/Pt/Au Ohmic Contacts to p-type GaAs", Japanese Journal of Applied Physics, vol. 30, No. 4A, Apr., 1991, pp. L558-L560.

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