Method of discharge processing of semiconductor

Details Method of discharge processing of semiconductor Method of discharge processing of semiconductor

1994-03-28

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437172, 437203, 219 6917, H01L 2114, H01L 21306

Patent

active

054299845

ABSTRACT:
A method of discharge processing of a semiconductor comprises the steps of: providing a low-resistivity portion on the semiconductor; and application of a given voltage through the low-resistivity portion between the semiconductor and a tool electrode suitably positioned with respect to the semiconductor to discharge the voltage. In the conventional photolithography technique, formation of a through-hole with a good straightness is difficult because of side etching. On the other hand, the prior art discharge processing is difficult to process a semiconductor because a potential barrier occurs, so that a high voltage is required for discharge processing. However, the high voltage deteriorates the semiconductor. In the discharge processing of the invention, a relative low voltage can be used for discharge processing of a semiconductor by providing the low-resistivity portion on the semiconductor. The low-resistivity portion may be formed by deposition of aluminum.

REFERENCES:
patent: 3914170 (1975-10-01), Ballard et al.
patent: 4131524 (1978-12-01), Gieles
patent: 4510674 (1985-04-01), Izu et al.
patent: 4534100 (1985-08-01), Lane
patent: 4735678 (1988-04-01), Mandigo et al.
patent: 4806496 (1989-02-01), Suzuki et al.
patent: 5055637 (1991-10-01), Hagner
patent: 5116782 (1992-05-01), Yamaguchi
Lahiri, IBM Tech. disclosure Bulletin vol. 22, No. 2, Jul. 1979, pp. 831-832.
"Processing of Si Wafer by Discharge" by N. Koji; the 1987 fiscal year papers of a scientific lecture at the spring meeting of the Japan society for precision engineering; pp., 741 and 742.
"Surface Micromachining of Polymide/Metal Composites for a Shear-Stress Sensor" by M. A. Schmidt et al; Aug. 1987 IEEE.
Yu-Tung Yang, "Semiconducting wafer form shaping with an electric discharge machine", Review of Scientific Instruments, vol. 59, No. 9, Sep. 1, 1988, New York, N.Y., USA, pp. 2094-2096.

Affiliated with

Also associated with

Rating

Method of discharge processing of semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of discharge processing of semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of discharge processing of semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759811