Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-08-29

1995-07-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437111, 437 89, 117105, H01L 2120

Patent

active

054299837

ABSTRACT:
A method of manufacturing a semiconductor device according to the present invention comprises the steps of forming a conductive film on an insulating film, forming growth nucleuses containing any of elements in group IIIb, group IVb, group Vb and group VIIb that does not constitute the conductive film and the insulating film on the surface of the conductive film, and growing a semiconductor selectively on growth nucleuses.

REFERENCES:
patent: 4876218 (1989-10-01), Pessa et al.
patent: 5134091 (1992-07-01), Chikyou et al.
patent: 5141893 (1992-08-01), Ito et al.
patent: 5229332 (1993-07-01), Cho
patent: 5242530 (1993-09-01), Batey et al.
patent: 5242580 (1993-09-01), Batey et al.
Chourasa et al. in Nature, vol. 249, May 1974, pp. 28-29, in "Ultra thin conducting films of gold on platinum nucleating layers".
G. N. Parsons, Applied Physics Letter 59, IBM Research Division, New York, Aug. 16, 1991, pp. 2546-2548.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759794