Method of making linear capacitors for high temperature applicat

Details Method of making linear capacitors for high temperature applicat Method of making linear capacitors for high temperature applicat

1994-06-30

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 437919, H01L 2170

Patent

active

054299810

ABSTRACT:
A method for making a voltage linear capacitor for use with a metal oxide semiconductor field transistor wherein a capacitor portion of an SOI substrate is heavily doped with phosphorus. The thin oxide layer used for the transistor gate oxide also serves as the capacitor dielectric and the thickness of the dielectric relative to the gate oxide is controlled.

REFERENCES:
patent: 5246870 (1993-09-01), Merchant
patent: 5266512 (1993-11-01), Kirsch
patent: 5270265 (1993-12-01), Hemmenway et al.
patent: 5273915 (1993-12-01), Hwang et al.
patent: 5286670 (1994-02-01), Kang et al.

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