Trench buried-bit line mask ROM process

Details Trench buried-bit line mask ROM process Trench buried-bit line mask ROM process

1994-02-02

1995-07-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437203, 148DIG50, H01L 218246

Patent

active

054299730

ABSTRACT:
A method for fabricating a trench buried-bit line mask ROM includes the steps: firstly, longitudinally coating a plurality of spaced photo-resist strips on a silicon well surface thus dividing the silicon well surface into a plurality longitudinally spaced strip regions; secondly, etching into each of the silicon strip regions a predetermined depth and forming a longitudinal trench therein; thirdly, depositing a strip of N+ ions along each of the longitudinal trenches such that each strip of N+ ions constitutes a bit line of the ROM; fourthly, removing the photoresist strips from the silicon well surface and leaving a silicon ridge between each two trenches such that an inverse U-shaped channel is defined substantially along periphery of each silicon ridge; fifthly, applying a layer of oxide material to cover the trenches and the silicon ridges; and, sixthly, laterally depositing a plurality of spaced semiconductor strips on the oxide layer such that each of the lateral semiconductor strips constitutes a word line of the ROM.

REFERENCES:
patent: 5021355 (1991-06-01), Dhong et al.
patent: 5084418 (1992-01-01), Esquivel et al.
patent: 5180680 (1993-01-01), Yang

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