Process for forming electrically programmable read-only memory c

Details Process for forming electrically programmable read-only memory c Process for forming electrically programmable read-only memory c

1994-05-31

1995-07-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437191, H01L 218247

Patent

active

054299691

ABSTRACT:
Flash EEPROM cells having merged select/control gates may be formed, so that the portions of the channel regions that correspond to select transistors are formed after spacers are formed but prior to patterning a merged select/control gate layer. Because the portions of the channel regions that correspond to the select transistors are not determined by the patterning of the merged select/control gate layer, misalignment of the mask used to pattern the merged select/control gate layer does not affect the size of the select transistor portion of the channel region. The spacers may be left on over the substrate in the finished devices thereby saving at least one processing step. The memory structure may also be used in other EPROM-type memory cells, such as individually erasable EEPROMs and EPROMs that are not electrically erasable.

REFERENCES:
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4949140 (1990-08-01), Tam
patent: 5063172 (1991-11-01), Manley
patent: 5147813 (1992-09-01), Woo
patent: 5194925 (1993-03-01), Ajika et al.
patent: 5231041 (1993-07-01), Arima et al.
patent: 5256584 (1993-10-01), Hartmann
patent: 5268319 (1993-12-01), Harari
patent: 5268585 (1993-12-01), Yamauchi
patent: 5296396 (1994-03-01), Bellezza
Heinrich, et al.; "A 0.5 .mu.m CMOS Technology for Multifunctional Appl. with Embedded, etc.;" IEDM; pp. 445-448 (1993).

Affiliated with

Also associated with

Rating

Process for forming electrically programmable read-only memory c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming electrically programmable read-only memory c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming electrically programmable read-only memory c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759718