1979-05-21
1982-05-11
Larkins, William D.
357 23, 357 46, 357 55, 357 60, H01L 2704, H01L 2972, H01L 2978, H03K 1756
Patent
active
043297056
ABSTRACT:
A relatively high power switching device is provided via the combination on a common substrate of a VMOS transistor having a gate electrode for receiving a control signal, a drain electrode, and a source electrode, individually connected to the collector and base electrodes of a bipolar transistor, respectively, the collector-emitter current path of the latter being the main current carrying path of the switching device.
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Barlage, ". . . VMOS FETs . . .", EDN, Nov. 5, 1978, pp. 93-98.
Barlage, ". . . Switched-Mode . . . VMOS and Bipolar", Fifth National Solid-State Power Conversion Conf. (POWERCON 5), Proceedings, session D2, pp. D2-1 to D2-8, May '78.
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Siliconix Application Note AN-76-3, May 1976.
Exxon Research & Engineering Co.
Larkins William D.
Watov Kenneth
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