MOS Random access memory with buried storage capacitor

Details MOS Random access memory with buried storage capacitor MOS Random access memory with buried storage capacitor

1979-09-19

1982-05-11

Munson, Gene M.

357 24, 357 59, H01L 2702, H01L 2978, H01L 2904

Patent

active

043297048

ABSTRACT:
A one transistor, one capacitance type dynamic MOS.RAM is provided with a buried storage capacitor and a planar transfer electrode. The MOS.RAM is, therefore, characterized by a small size of the memory cells and a simple production process. One process feature of the present invention is that a quick diffusion through polycrystalline silicon is employed for forming a vertical connection between the buried storage capacitor and the source or drain of the MOS transistor.

REFERENCES:
patent: 3947299 (1976-03-01), Weijland
patent: 4003036 (1977-01-01), Jenne
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4251828 (1981-02-01), Sakurai

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