Method of manufacturing an heterojunction bipolar transistor

Details Method of manufacturing an heterojunction bipolar transistor Method of manufacturing an heterojunction bipolar transistor

1994-08-08

1995-07-04

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437128, 437133, 148DIG72, H01L 21331, H01L 29201, H01L 29207, H01L 21203

Patent

active

054299578

ABSTRACT:
A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance, heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.

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S. Nozaki et al., "GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base", Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, pp. 356-358.
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