Method of preferentially-ordering a thermally sensitive element

Details Method of preferentially-ordering a thermally sensitive element Method of preferentially-ordering a thermally sensitive element

1997-08-13

1999-10-26

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 92, 117 94, 117101, C30B 900

Patent

active

059721081

ABSTRACT:
Method of preferentially-ordering a thermally sensitive element (50) may comprise the step of forming a first thin film layer of electrically conductive material (75). A thin film layer of thermally sensitive material (80) may be formed on a surface of the first layer of electrically conductive material (75). A second thin film layer of electrically conductive material (85) of lanthanum strontium cobalt oxide (LSCO) may be formed on a surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). A nucleation layer (87) may be formed in communication with the surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). The layer of thermally sensitive material (80) may be crystallized beginning at the surface of the thermally sensitive layer (80) in communication with nucleation layer (87). The nucleation layer (87) may be removed.

REFERENCES:
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patent: 5479317 (1995-12-01), Ramesh
"Ferroelectric Thin Film Research in France," ISIF 91, Proceedings, 3rd International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, Apr. 3-5, 1991, P. Gaucher, S.P.Faure, P. Barboux, Thomson CSF, Laboratoire Central de Recherches, Orsay.
"Producibility advances in hybrid uncooled infrared devices," Proceedings Reprint from Infrared Detectors and Focal Plane Arrays III, SPIE--The International Society for Optical Engineering, Apr. 5-6, 1994, Orlando, FL, Robert Owen, Jeff Belcher, Howard Beratan, Steve Frank.
"Pyroelectric Imaging," Bernard M. Kulwicki and Ahmed Amin, Howard R. Beratan and Charles M. Hanson, IEEE CH3080-0-7803-0465/9/92.

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