Method and apparatus for doping semiconductor material

Details Method and apparatus for doping semiconductor material Method and apparatus for doping semiconductor material

1982-05-03

1984-02-28

Edmundson, F.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

148189, H01L 2122, H01J 1700

Patent

active

044340362

ABSTRACT:
Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and leading doping material ions into the semiconductor material by means of the electrical field, and an apparatus for carrying out the method.

REFERENCES:
patent: 3090745 (1963-05-01), Berghaus
patent: 3337438 (1967-08-01), Gobeli et al.
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3738828 (1973-06-01), Inoue
patent: 3908183 (1975-09-01), Ennis
patent: 3960605 (1976-06-01), Beck et al.
patent: 3997379 (1976-12-01), Rosnowski
Vossen, J. Electrochem. Soc., vol. 126, No. 2, pp. 319-322, 2/79.

Affiliated with

Also associated with

Rating

Method and apparatus for doping semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for doping semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for doping semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-758185