Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-07
1994-11-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 27, 257192, 257194, 257284, 257623, H01L 2984
Patent
active
053692888
ABSTRACT:
In a semiconductor device, a channel layer of an undoped semiconductor material passes carriers therethrough ballistically, a carrier injection part injects the carriers into the channel layer with directivity to form a quantum mechanical wave of carriers, a carrier collection part provided on the channel layer recovers the carriers; a carrier drainage part provided on the channel layer absorbs the carriers that have been scattered; a carrier control part controls the flow of the carriers from the carrier injection part to the carrier collection part; and a potential control layer, provided adjacent to the channel layer, controls the potential level of the channel layer such that the potential level is uniform throughout the channel layer.
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patent: 5130765 (1992-07-01), Van Houten et al.
Sivan et al., "Hot Electron Transport in Two Dimensional Electron Gas", Solid-State Electronics, vol. 33, No. 7, 1990, pp. 979-986.
Spector et al, "Refractive Switch for Two-Dimensional Electrons," Appl. Phys. Lett, 56(24), 11 Jun. 1990, pp. 2433-2435.
Datta et al, "Novel Interference Effects Between Parallel Wells", Physical Review Letters, vol. 55, No. 21, 18 Nov. 1985, pp. 2344-2347.
Fujitsu Limited
Mintel William
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