Transparent asymmetric electrode structure for charge coupled de

Details Transparent asymmetric electrode structure for charge coupled de Transparent asymmetric electrode structure for charge coupled de

1981-03-16

1983-07-19

Munson, Gene M.

357 59, H01L 2978, H01L 2904

Patent

active

043946755

ABSTRACT:
A charge coupled device (CCD) image sensor comprises a semiconductor substrate having a transparent insulating layer formed on a light receiving surface thereof, a first set of transfer electrodes disposed in groups of one or more electrodes, said groups being disposed in spaced-apart relation on the insulating layer, and a second set of transfer electrodes disposed on the insulating layer, the electrodes of the second set being disposed in the spaces between the groups of electrodes of the first set and being substantially wider and more uniformly transparent in the visible region of the spectrum than the electrodes of the first set. In the preferred embodiment of the invention, the CCD is a three-phase, three-level device, comprising two levels of slightly overlapping polysilicon electrodes which constitute the first set of transfer electrodes and a third level of substantially unpatterned conductive transparent metal oxide which constitutes the second set of transfer electrodes.

REFERENCES:
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patent: 3988613 (1976-10-01), Brown et al.
patent: 4012767 (1977-03-01), Brown et al.
patent: 4141024 (1979-02-01), Kano et al.
patent: 4194213 (1980-03-01), Kano et al.
patent: 4242694 (1980-12-01), Koike et al.
patent: 4280141 (1981-07-01), McCann et al.
Sequin et al., "Charge-Coupled Area Image Sensor Using Three Levels of Polysilicon" IEEE Trans. Electron Devices vol. ED-21 (11/74) pp. 712-720.
Abe et al., "A CCD Imager with SiO.sub.2 Exposed Photosensor Arrays" IEEE Int. Electron Devices Meeting (12/77) pp. 542-545.
"Charge Transfer Devices" by Sequin and Tompsett, Academic Press, 1975, at p. 38.

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