Method of forming a self aligned aluminum polycrystalline silico

Details Method of forming a self aligned aluminum polycrystalline silico Method of forming a self aligned aluminum polycrystalline silico

1983-02-15

1984-02-28

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

148174, 29589, H01L 21285

Patent

active

044334699

ABSTRACT:
An improved self-aligned conductive gate member formed by suppressing or decreasing the size of the as-deposited grains of polysilicon and by suppressing further grain growth which may occur during a subsequent annealing or processing step. By maintaining the as-deposited grains as small as possible, the initiation of intergranular voids is minimized. This is accomplished by forming a low resistivity oxygen doped polycrystalline silicon layer in place of the conventional polysilicon.

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Yamaguchi et al., "An Advanced MOS-IC Process Technoloy Using Local Oxidation of Oxygen-Doped Polysilicon Films", IEEE J. of Solid State Circuits, vol. SC-13, No. 4, Aug. 1978.
"Graded or Stepped Energy Band-Gap-Insulator MIS Structures (GI-MIS Structures (GI-MIS or SI-MIS)", D. J. DiMaria, Journal of Applied Physics, vol. 50, No. 9, Sep. 1979.

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