Method for making semiconductor device having improved thermal s

Details Method for making semiconductor device having improved thermal s Method for making semiconductor device having improved thermal s

1981-03-20

1984-02-28

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29591, 148187, 148188, H01L 2122, H01L 21265, H01L 2128

Patent

active

044334680

ABSTRACT:
A semiconductor device has a first semiconductor layer with a main surface and a second semiconductor layer forming a PN junction with the first semiconductor layer, the PN junction reaching the main surface. An insulating layer is formed on the main surface and has at least one window which at least exposes a part of the second semiconductor layer. A third semiconductor layer, which is the same conductivity type as the second semiconductor layer, is formed on a portion exposed in the window. A metal-semiconductor alloy layer is electrically connected to the third semiconductor layer. According to another aspect of the invention, a method of manufacturing the smiconductor device uses the steps of providing a first semiconductor layer with a main surface, making a second semiconductor layer to form a PN junction reaching the main surface of the first semiconductor layer, and forming an insulating layer with at least one window exposing at least a part of the second semiconductor layer on the main surface. A third semiconductor layer is formed in the exposed window by introducing impurities of the same conductivity type as that used in the second semiconductor layer, through the window, thus forming a non-doped semiconductor layer which covers the third semiconductor layer. A metal layer is formed on the non-doped semiconductor layer.

REFERENCES:
patent: 3382568 (1968-05-01), Kuiper
patent: 3918149 (1975-11-01), Roberts
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4084311 (1978-04-01), Yasuoka et al.
patent: 4151631 (1979-05-01), Klein
patent: 4313768 (1982-02-01), Sanders et al.

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