Photoconductive member with .alpha.-Si(N) barrier layer

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 60, 430 63, 430 66, 430 67, 430 84, 430128, 427 74, 2525011, 357 2, G03G 5082, G03G 514

Patent

active

043944264

ABSTRACT:
A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.

REFERENCES:
patent: 3650737 (1972-03-01), Maissel et al.
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4253882 (1981-03-01), Dalal
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4289822 (1981-09-01), Shimada et al.
patent: 4317844 (1982-03-01), Carlson
patent: 4359514 (1982-11-01), Shimizu et al.
patent: 4365013 (1982-12-01), Ishioka et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoconductive member with .alpha.-Si(N) barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member with .alpha.-Si(N) barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member with .alpha.-Si(N) barrier layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-751798

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.