Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-05-28
1995-01-17
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257265, 257302, 257365, H01L 2910, H01L 2968, H01L 2978
Patent
active
053828160
ABSTRACT:
A semiconductor device allowing control of its threshold voltage without requiring change in the materials of its gate electrodes and suitable for high density integration is disclosed. The semiconductor device includes a p type monocrystalline silicon substrate 1 having a cylindrical portion with inner and outer surfaces and extending in a vertical direction. A first gate electrode 8 and a second gate electrode 10 are disposed at the inner surface and the outer surface of the cylindrical portion 2, respectively. A source/drain region 5 is formed on the top end of the cylindrical portion 2, while a source/drain region 3 is formed on the inner bottom surface of the cylindrical portion 2. Therefore, the cylindrical portion 2 can be utilized as a channel region of an MIS field effect transistor. The threshold voltage of the transistor can easily be controlled by applying separate voltages to the two gate electrodes, the first electrode and the second electrode.
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Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid
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