Method of manufacturing polycrystalline silicon having columnar

Details Method of manufacturing polycrystalline silicon having columnar Method of manufacturing polycrystalline silicon having columnar

1993-07-02

1995-01-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 37, 437 60, H01L 21469

Patent

active

053825497

ABSTRACT:
In a semiconductor device, the polysilicon resistor or electrode formed of a polysilicon film has a columnar crystalline orientation vertical to the surface of the semiconductor substrate. Thus, the variation in grain size due to the subsequent heat treatment is small, and therefore, the polysilicon resistor or electrode has a high uniformity of resistance value. In addition, since the polysilicon film is formed in the groove in the insulating film formed on the semiconductor substrate, a polysilicon pattern surface which is flush with the surface of the insulating film can be obtained. Thus, unevenness does not occur on the surface of a passivation CVD film coated in the subsequent step, and metal wires formed thereon are not cut.

REFERENCES:
patent: 4035906 (1977-07-01), Tasch et al.
patent: 4488162 (1984-12-01), Jambotkar
patent: 4591893 (1986-05-01), Yamazaki
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4807015 (1989-02-01), Kobayashi et al.

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