Semiconductor laser including light reflecting layer

Details Semiconductor laser including light reflecting layer Semiconductor laser including light reflecting layer

1994-03-04

1995-07-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H07S 319

Patent

active

054369231

ABSTRACT:
A semiconductor laser device includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer on the semiconductor substrate; an active layer on the upper cladding layer; a second conductivity type first upper cladding layer on the active layer; a second conductivity type Al.sub.z Ga.sub.1-z As light reflecting layer on the first upper cladding layer, where z is at least 0.6; a second conductivity type second upper cladding layer of Al.sub.y Ga.sub.1-y As including a stripe shaped ridge region portion and thin film layer portions on the light reflecting layer; and first conductivity type current blocking layers disposed on both side thin film portions of the second upper cladding layer, burying the ridge region portion. Therefore, the surface defect density can be reduced form 10.sup.6 /cm.sup.2 in the prior art to 10.sup.4 /cm.sup.2, and thus the surface morphology is improved to a great extent and a high reliability semiconductor laser device having preferable device characteristics is obtained. When the total thickness of the first upper cladding layer, the light reflecting layer, the thin film layer portion of second upper cladding layer is no more than 0.3 .mu.m, there is no idle current which causes the injected current to become broadened in the transverse direction under the current blocking layers, whereby preferable device characteristics are obtained.

REFERENCES:
patent: 4615032 (1986-09-01), Holbrook
Jost et al, "Ridge Formation for AlGaAs GRINSCH Lasers by Cl.sub.2 Reactive Ion Etching," IEEE Photonics Technology Letters, vol. 2 No. 10, Oct. 1990, pp. 697-698.
Nakatsuka et al, "A New Self-Aligned Structure For (GaAl) As High Power Lasers With Seletively Grown Light Absorbing GaAs Layers Fabricated By MOCVD", Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. L498-L500.

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