Excavating
Patent
1994-09-16
1995-07-25
Voeltz, Emanuel T.
Excavating
371 212, 36518901, 365201, G11C 700
Patent
active
054369118
ABSTRACT:
A semiconductor memory device comprises a memory array. Each bit line pairs connected to a first amplifier. Write buses, read buses and a read/test circuit are provided. A column decoder selects simultaneously every other plurality of bit line pair at the time of testing. The read/test circuit compares the data read out from the selected plurality of bit line pair with the given expected data to provide the comparison result. Then the column decoder selects simultaneously the remaining one other plurality of bit line pairs. The read/test circuit compares data read out from the selected plurality of bit line pair with a given expected data to provide the comparison result.
REFERENCES:
patent: 4479202 (1984-10-01), Uchida
patent: 4713797 (1987-12-01), Morton et al.
patent: 4930067 (1990-05-01), Nakamura
patent: 4954992 (1990-09-01), Kumanoya et al.
patent: 4984206 (1991-01-01), Komatsu et al.
patent: 5075892 (1991-12-01), Choy
patent: 5130580 (1992-07-01), Min et al.
patent: 5185744 (1993-02-01), Arimoto et al.
patent: 5272665 (1993-12-01), Uejugi
patent: 5276647 (1994-01-01), Matsui et al.
patent: 5278785 (1994-01-01), Hazani
patent: 5289412 (1994-02-01), Frary et al.
patent: 5293386 (1994-03-01), Muhmenthaler
patent: 5295094 (1994-03-01), Miyatake
1989 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 1989, Session 16: Dynamic RAMs, FAM 16.4; A 60ns 3.3V 16Mb DRAM, Arimoto et al.
1987 Symposium on VLSI Circuits, Digest of Technical Papers, May 1987, IEEE Ct. No. 87 TH 0190-9, "BICMOS Circuit Technology for high Speed DRAMs", Watanabe et al.
1990 Symposium on VLSI Circuits, Digest of Technical Papers, Jun. 1990, IEEE Cat. No. 90 CH 2885-2, "A 1.5V Circuit Technology for 64Mb DRAMs", Nakagome et al.
Mitsubishi Denki & Kabushiki Kaisha
Voeltz Emanuel T.
Wachsman Hal D.
LandOfFree
Semiconductor memory device comprising a test circuit and a meth does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device comprising a test circuit and a meth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device comprising a test circuit and a meth will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-745553