Semiconductor devices and method of manufacturing the same

Details Semiconductor devices and method of manufacturing the same Semiconductor devices and method of manufacturing the same

1981-12-11

1983-07-19

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 91, H01L 21263, C25F 300

Patent

active

043935770

ABSTRACT:
In a semiconductor device of the type comprising a semiconductor substrate made of P type silicon, a P type monocrystalline silicon region formed on the major surface of the substrate and containing a P type impurity, and a porous silicon oxide region surrounding the P type silicon region, the porous silicon oxide region is made to contact all side surfaces of the P type silicon region and all or at least a portion of the bottom surface thereof.

REFERENCES:
patent: 3756862 (1973-09-01), Ahn et al.
patent: 3918996 (1975-11-01), Morgan
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3982967 (1976-09-01), Ku et al.
Ohmura et al., Phys. Stat. Solidi, 15a, (1973), 93.
Ohmura et al., Solid St. Comm., 11 (1972), 263.
Gorelkinskii et al., Phys. Stet. Sol., 22a, (1974), k55.

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