Silicon on sapphire MOS transistor

Details Silicon on sapphire MOS transistor Silicon on sapphire MOS transistor

1975-09-04

1977-10-11

Wojciechowicz, Edward J.

357 4, 357 86, 357 52, H01L 2712, H01L 2978, H01L 2934

Patent

active

040539164

ABSTRACT:
An MOS transistor constructed using silicon on sapphire technology in which the channel region can be electrically connected either to the source or drain terminal is disclosed. The transistor is advantageous in that the shift of the threshold voltage of the transistor in the presence of radiation is substantially decreased. Connecting the channel region of the transistor to the source terminal also substantially reduces what is normally referred to as the "kink" effect in MOS transistors utilizing floating substrate channel regions. Reducing the sensitivity to radiation and the kink effect results in a transistor having improved electrical characteristics.

REFERENCES:
patent: 3484662 (1969-12-01), Hagon
patent: 3590342 (1971-06-01), Jekat

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