Temperature compensated constant current source device

Details Temperature compensated constant current source device Temperature compensated constant current source device

1976-03-22

1977-10-11

Wojciechowicz, Edward J.

357 23, 357 51, 357 86, 357 91, H01L 2980, H01L 2978, H01L 2702

Patent

active

040539156

ABSTRACT:
There is disclosed a constant current source device comprising a diffused integrated circuit resistor in combination with a junction field effect transistor (FET). The FET is fabricated having an ion-implanted channel and diffused regions of the same conductivity type of material as the channel material, the diffused regions constitute the Source and Drain electrodes of the FET. The use of ion-implantation enables a tight tolerance to be maintained on the pinch-off voltage (V.sub.P) characteristics of the FET. By extending the source diffusion region the diffused resistor is produced integral with the FET and has a constant and known, but high temperature coefficient (TC). By taking advantage of the high TC of the resistor and the controlled V.sub.P of the FET, the combining structure provides a constant current having a substantially zero temperature coefficient over the temperature range from -50.degree. C to +125.degree. C.

REFERENCES:
patent: 3590342 (1971-06-01), Jekat
patent: 3623217 (1971-11-01), Kawagoe
patent: 3787717 (1974-01-01), Fischer et al.

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